Modeling Electromigration Lifetimes of Copper Interconnects
نویسندگان
چکیده
A model for early failure due to electromigration in copper dualdamascene interconnects is proposed. The model is based on analytical expressions obtained from solutions of electromigration stress build-up assuming slit void growth under the interconnect vias. It is demonstrated that the model satisfactorily describes the complex physics of void nucleation and growth of the electromigration damage. Furthermore, it is shown that the simulation results provide reasonable estimates for early electromigration failures.
منابع مشابه
A compact model for early electromigration failures of copper dual-damascene interconnects
A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution ...
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